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Awards

ALD 2019 Innovator Awardee

The ALD Innovator award “For Original Work and Leadership in ALD” will be presented on Monday prior to the Plenary Lectures.

Erwin Kessels, ALD 2019 Innovator Awardee

W.M.M. (Erwin) Kessels
Eindhoven University of Technology TU/e

Biography: Erwin Kessels is a full professor at the Eindhoven University of Technology TU/e where he is also the scientific director of the NanoLab@TU/e clean room facilities. Erwin received his MSc and PhD degree (with highest honors) in Applied Physics from the TU/e in 1996 and 2000, respectively. His research interests cover the field of synthesis of ultrathin films and nanostructures using methods such as (plasma-enhanced)  atomic layer deposition (ALD) and atomic layer etching (ALE). Within the field of ALD, he has contributed most prominently by his work on plasma-assisted ALD, his research related to ALD for photovoltaics, and ALD for nanopatterning (including area-selective ALD). Currently Erwin is focusing his research on atomic scale processing, a field which is believed to grow in importance quickly in the next decade for a wide variety of application domains. He was chair of the International Conference on Atomic Layer Deposition in 2008 (Bruges, Belgium) and he frequently (co-)organizes ALD-related workshops. He will serve as chair ALE workshop in 2020. Erwin is active within the American Vacuum Society and has been President of the Netherlands Vacuum Society. He is an associate editor of the Journal of Vacuum Science and Technology. He is also the founder of the blog AtomicLimits.com and of the ALD Academy.

Abstract: Atomic Scale Processing: From Understanding to Innovation
Atomic scale processing is the collective term for processing methods that are currently more and more being explored – and industrially employed – to prepare thin films and nanostructures in a highly controllable way with atomic scale precision. Atomic layer deposition (ALD) and atomic layer etching (ALE) are two prominent examples but also state-of-the-art nanopatterning and area-selective deposition (ASD) approaches can in many cases be regarded as examples of atomic scale processing. In this presentation, I will address several recent and emerging trends in atomic scale processing and discuss how understanding of the underlying mechanisms has contributed to important innovations in the field, either in research or in industry. Application areas to be addressed are especially nanoelectronics and photovoltaics which I will discuss from my own experience and perspective. Topics to be discussed are: (i) the growing importance of plasma ALD, aspects such as conformality and the role (and control) of ions; (ii) the necessity of in situ metrology methods (e.g. in situ spectroscopic ellipsometry) for process monitoring and advanced surface spectroscopy for obtaining more quantitative insight into fundamental parameters; (iii) the use of ALD in nanopatterning and the interest in area-selective ALD including those combinations with intermediate etch steps; and (iv) the need for isotropic and anisotropic ALE, either thermal or plasma-based.

ALD Student Awards

ALD student awards have been established to recognize outstanding research performed by a graduate student in areas of interest to Atomic Layer Deposition. All Student Awards will be presented on Wednesday during the closing remarks. You must be present to win.

The ALD Student Finalists have been chosen from the submitted student abstracts and are listed below. ALD Student Finalists will receive a $500 award upon completing the competition. Competition for the award requires attendance at ALD 2019 and a student presentation of the work in an oral session.

The ALD Best Student Paper Award winner will be selected on the basis of the oral presentation, considering quality of research and clarity of presentation. The award is sponsored by Lam Research and consists of a $1,000 cash prize and a certificate.

ALD Best Student Paper Award Winner
  • Tuesday, July 23, 4:00 pm, Grand Ballroom H-K
    AS2-TuA11: Area-Selective Deposition and Smoothing of Ru by Combining Atomic Layer Deposition and Selective Etching, Martijn Vos, Eindhoven University of Technology, Netherlands; S. Chopra, University of Texas at Austin; M. Verheijen, Eindhoven University of Technology, Netherlands; J. Ekerdt, University of Texas at Austin; S. Agarwal, Colorado School of Mines; W.M.M. Kessels, A.J.M. Mackus, Eindhoven University of Technology, Netherlands
ALD Best Student Paper Award Finalists
  • Monday, July 22, 1:30 pm, Grand Ballrom A-C
    AA1-MoA1: Atomic Layer Deposition on Pharmaceutical Particles for Inhaled Drug Delivery, Damiano La Zara, Delft University of Technology, Netherlands; D. Zhang, M.J. Quayle, G. Petersson, S. Folestad, AstraZeneca, Sweden; J.R. van Ommen, Delft University of Technology, Netherlands
  • Tuesday, July 23, 8:45 am, Grand Ballroom H-K
    AF2-TuM4: Atomic Layer Deposition of Lead(II) Sulfide at Temperatures Below 100 °C, Georgi Popov, University of Helsinki, Finland; G. Bačić, Carleton University, Canada; M. Mattinen, M. Vehkamäki, K. Mizohata, M. Kemell, University of Helsinki, Finland; S. Barry, Carleton University, Canada; J. Räisänen, M. Leskelä, M. Ritala, University of Helsinki, Finland
  • Wednesday, July 24, 8:00 am, Grand Ballroom E-G
    AM1-WeM1: Impact of Operating Parameters on Precursor Separation in “Air Hockey” Spatial Atomic Layer Deposition Reactor, John Grasso, B. Willis, University of Connecticut
  • Wednesday, July 24, 2:30 pm, Grand Ballroom E-G
    NS-WeA5: Atomic Layer Deposition of Emerging 2D Semiconductors HfS2 and ZrS2, Miika Mattinen, G. Popov, M. Vehkamäki, P. King, K. Mizohata, P. Jalkanen, J. Räisänen, M. Leskelä, M. Ritala, University of Helsinki, Finland

Best Student Paper Award for Research Related to Semiconductor Applications of ALD: Up to three finalists will be selected for this award based on the quality of their abstract, novelty of the research, and its relevance to the semiconductor industry. The winner will be judged based on the oral presentation at the conference by members of the ALD Program Committee. This award is sponsored by Eugenus. Each finalist will receive a cash prize of $250 and a certificate, and the award winner will receive an additional cash prize of $250. You must be present during the closing remarks to win.

Best Student Paper Award for Research Related to Semiconductor Applications of ALD Winners
  • Monday, July 22, 5:15 pm, Grand Ballroom H-K
    AF4-MoA16: Fundamental Study on the SiO2 Growth Mechanism of Electronegativity Difference of Metal-O in the High-k Underlayers by PE-ALD Method, Erika Maeda, Shibaura Institute of Technology, Japan
  • Tuesday, July 23, 2:15 pm, Grand Ballroom H-K
    AS1-TuA4: Area Selective Chemical Vapor Deposition of Co from the Co (CO) Precursor: Use of Ammonia to Afford Dielectric-Dielectric Selectivity, Zhejun Zhang, University of Illinois at Urbana-Champaign

In addition, several ALD Student Poster Awards will be presented on Wednesday during the closing remarks. All accepted student poster abstracts are eligible. You must be present to win.

ALD Student Poster Award Winners
  • Monday, July 22, 5:45 pm, Evergreen Ballroom
    AF1-MoP2 Atomic Layer Deposition of Silver Metal Films: Synthesis and Characterization of Thermally Stable Silver Metal Precursors, Harshani J. Arachchilage, C.H. Winter, Wayne State University

ALE Student Awards

ALE student awards have been established to recognize outstanding research performed by a graduate student in areas of interest to Atomic Layer Etching.

ALE Student Finalists have been chosen from the submitted student abstracts and are listed below. The first place ALE 2019 Best Student Paper Award consists of $1,000.00 USD sponsored by Lam Research and a certificate. The second place ALE 2019 Best Student Paper Award consists of $500.00 USD and a certificate. The awards will be presented to the winners on the last day of the conference during the closing remarks. You must be present to win.

ALE Best Student Paper First Place Award Winner
  • Wednesday, July 24, 11:45 am, Regency Ballrom A-C
    ALE2-WeM16: Enhancing Etch Selectivity in Plasma-Assisted ALE of Silicon-Based Dielectrics using Surface Functionalization, Ryan Gasvoda, Colorado School of Mines; S. Wang, E. Hudson, Lam Research Corp.; S. Agarwal, Colorado School of Mine
ALE Best Student Paper Second Place Award Winner
  • Wednesday, July 24, 11:30 am, Regency Ballrom A-C
    ALE2-WeM15: Atomic Layer Etching of HfO2 with Selectivity to Si by Utilizing Material-Selective Deposition Phenomena, Kang-Yi Lin, C. Li, University of Maryland; S. Engelmann, R.L. Bruce, E.A. Joseph, IBM T.J. Watson Research Center; D. Metzler, IBM Research – Albany; G.S. Oehrlein, Univ. of Maryland
ALE Best Student Paper Award Finalists
  • Monday, July 22, 2:15 pm, Regency Ballrom A-C
    ALE1-MoA4: Self-limiting Atomic Layer Etching of SiO2 using Low Temperature Cyclic Ar/CHF3 Plasma, Stefano Dallorto, Lawrence Berkeley National Lab; A. Goodyear, Cooke, Oxford Instruments Plasma Technology, UK; S. Dhuey, Lawrence Berkeley National Lab; J. Szornel, Lawrence Livermore National Lab; I. Rangelow, Ilmenau University of Technology, Germany; S. Cabrini, Lawrence Berkeley National Lab
  • Monday, July 22, 5:00 pm, Regency Ballrom A-C
    ALE2-MoA15: ALE of GaN (0001) by Sequential Oxidation and H2/N2 Plasma, Kevin Hatch, D. Messina, Fu, K. Fu, X. Wang, M. Hao, Y. Zhao, R. Nemanich, Arizona State Univ.
  • Tuesday, July 23, 9:00 am, Regency Ballrom A-C
    ALE1-TuM5: Spontaneous Etching of B2O3 and TiO2 by HF: Removal Reaction in WO3 ALE and TiN ALE, Austin Cano, University of Colorado – Boulder; S.K. Natarajan, Tyndall National Institute, Ireland; J. Clancey, Univ. of Colorado
  • Wednesday, July 24, 9:30 am, Regency Ballrom A-C
    ALE1-WeM7: Formation of Ohmic Contacts to Si using In-situ Chemical Cleaning of the Substrate,
    Sara Iacopetti, Technion – Israel Institute of Technology, Israel; R. Tarafdar, S. Lai, M. Danek

In addition, several ALE Student Poster Awards will be presented on Wednesday during the closing remarks. All accepted student poster abstracts are eligible. You must be present to win.

ALE Student Poster Awards Winners
  • Sunday, July 21, 6:00 pm, Evergreen Ballroom
    ALE-SuP9 Atomic Layer Etching of SiO2 and Si3N4 with Fluorocarbon, Hydrofluorocarbon and Fluoroether Compounds, H. Chae, Yongjae Kim, T. Cha, Y. Cho, Sungkyunkwan University (SKKU), Republic of Korea
  • Sunday, July 21, 6:00 pm, Evergreen Ballroom
    ALE-SuP6 A Mechanistic Study of the HF Pulse in the Thermal Atomic Layer Etch of HfO2 and ZrO2, Rita Mullins, S. Kondati Natarajan, M. Nolan, Tyndall National Institute, Ireland

ALD Innovator Awardees

  • 2011: Roy Gordon
  • 2012: Markku Leskela
  • 2013: Steve George
  • 2014: Hyeongtag Jeon
  • 2015: Gregory Parsons
  • 2016: Suvi Haukka
  • 2017: Jeff Elam
  • 2018: Hyungjun Kim
  • 2019: W.M.M. (Erwin) Kessels

Other ALD Awards News

  • Tuomo Suntola, The international Millennium Technology Prize, 2018
  • Steven George (University of Colorado, Boulder), AVS John A. Thornton Memorial Award and Lecture, 2017
  • Hele Savin (Aalto University), Finnish Innovation Award for Women, 2017
  • Markku Leskelä (University of Helsinki), A. I. Virtanen -palkinto, 2011,
  • Tuomo Suntola, European SEMI award 2004,
  • Tuomo Suntola, The Finnish Engineering Achievement Award, 1985
  • Tuomo Suntola, Honorary Award for The Development of Manufacturing Technology for Electroluminescent Display Devices, The Foundation of Technology in Finland, 1981
  • Tuomo Suntola, Jorma Antson, Arto Pakkala, Sven Lindfors, Outstanding Paper Award for Atomic Layer Epitaxy for Producing EL Thin Films, The Society for Information Displays (SID), USA, 1980.
  • Tuomo Suntola, Award for Electroluminescent Display Technology, The Association of Finnish Electric and Electronics Industries, SETELI, 1980.

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Key Dates

Abstract Submission Deadline:
February 15, 2019

Author Acceptance Notifications:
April 8, 2019

Late News Abstract Deadline:
May 6, 2019

Early Registration Deadline:
June 1, 2019

Hotel Reservation Deadline:
June 27, 2019

Manuscript Deadline:
November 1, 2019

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